181

  • Name of journal
  • Number of edition
  • View count 181
  • Web Address
  • DOIdoi.org/10.47100/conference_physics/S2_11
  • Date of creation in the UzSCI system 14-08-2020
  • Read count 82
  • Date of publication
  • Main LanguageO'zbek
  • Pages73-79
Tags
Русский

В работе рассматриваются метод и методика бесконтактного неразрушающего контроля концентрации примеси железа в кремниевых пластинах p-типа проводимости, легированных акцепторными примесями, по параметрам пространственного распределения диффузионной длины неравновесных носителей заряда на основе регистрации поверхностной фото-ЭДС сканирующим электрометрическим зондом.

English

The paper describes the method and technique of contactless nondestructive testing of iron impurity concentration in p-type silicon wafers doped with acceptors based on studying the spatial distribution of minority carriers diffusion length using surface photovoltage registration with a scanning electrometric probe.

№ Author name position Name of organisation
1 Zharin A..
2 Pantsialeyeu K..
3 Svistun A..
4 Tyavlovsky K..
№ Name of reference
1 Pilipenko V.А., Saladukha V.A., Filipenya V.A., Vorobey R.I., Gusev O.K., Zharin A.L., Pantsialeyeu K.V., Svistun A.I., Tyavlovsky A.K., Tyavlovsky K.L. Characterization of the electrophysical properties of silicon-silicon dioxide interface using probe electrometry methods. Devices and Methods of Measurements. 2017;8(4):344-356. (In Russ.) https://doi.org/10.21122/2220-9506-2017-8-4-24-31.
2 Influence of rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by pyrogenous oxidation / V.A. Pilipenko, V.A. Solodukha, A. Zharin, O. Gusev, R. Vorobey, K. Pantsialeyeu, A. Tyavlovsky, K. Tyavlovsky, V.A. Bondariev // High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, 2019, vol. 23, iss. 3, p. 283–290. DOI: 10.1615/HighTempMatProc.2019031122.
3 Pantsialeyeu K.U., Svistun A.I., Tyavlovsky A.K., Zharin A.L. Digital contact potential difference probe. Devices and Methods of Measurements. 2016;7(2):136-144. (In Russ.) https://doi.org/10.21122/2220-9506-2016-7-2-136-144
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