333

  • Name of journal
  • Number of edition
  • View count 333
  • Web Address
  • DOIdoi.org/10.47100/conference_physics/S2_17
  • Date of creation in the UzSCI system 20-08-2020
  • Read count 233
  • Date of publication
  • Main LanguageO'zbek
  • Pages109-113
Tags
Русский

В работе рассмотрено влияние скоплений примесных атомов никеля на структуру монокристаллического кремния. С помощью метода электронно-зондового микроанализа изучены типичные свойства дислокационных линий, образующихся вокруг скоплений примесных атомов никеля в кремнии.

English

The effect of clusters of nickel impurity atoms on the structure of single-crystal silicon is considered. Using the electron probe microanalysis method, the typical properties of dislocation lines formed around clusters of nickel impurity atoms in silicon are studied.

№ Author name position Name of organisation
1 Turgunov N..
2 Zainabidinov S.Z.
3 Akbarov S..
4 Berkinov E..
№ Name of reference
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2 Nikolaeva EA Shear mechanisms of plastic deformation of single crystals. // Tutorial. Publishing house of Perm State Technical University. 2011. -50 p.
3 Baraz V.R., Levchenko V.P., Povzner A.A. The structure and physical properties of crystals // Textbook. Ekaterinburg: USTU-UPI, 2009. -164 p.
4 Talanin V.I., Talanin I.E. To the question of the correspondence of the hightemperature precipitation model to the classical theory of nucleation // FTT. 2014. Volume 56. Issue. 10, pp. 78-84.
5 Kveder V., Khorosheva M., Seibt M. Interplay of Ni and Au atoms with dislocations and vacancy defects generated by moving dislocations in Si. // Solid State Phenomena. 2016. Vol. 242. pp. 147-154.
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