Ушбу мақолада кремний асосли қуёш элементларида заряд ташувчиларининг кинетик характеристикалари ва волт-ампер характеристикасига гамма радиациянинг таъсирини назарий таҳлили ҳамда янги миллий рақамли технологик платформада олинган натижалар келтирилган
Ушбу мақолада кремний асосли қуёш элементларида заряд ташувчиларининг кинетик характеристикалари ва волт-ампер характеристикасига гамма радиациянинг таъсирини назарий таҳлили ҳамда янги миллий рақамли технологик платформада олинган натижалар келтирилган
In this article, describes theoretical analyzing of gamma radiation influence kinetic characteristics of carriers in silicon bases solar cell and its I-V charactersitics also give results that is taken by new digital technological platform.
№ | Author name | position | Name of organisation |
---|---|---|---|
1 | Nosirov M.. | ||
2 | Gulomov J.. | ||
3 | Madaminova I.. | ||
4 | Aliev R.. |
№ | Name of reference |
---|---|
1 | F.H.ATTIX,Dosimetry by Solid State Devices, NRL Report 5777, June 15, 1962. |
2 | J. Barth, “Modeling Space Radiation Environment”, 1997 IEEE NSREC Short Course. |
3 | M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, “Solar cell efficiency tables (version 39),” Progress in Photovoltaics: Research and Applications, vol. 20, no. 1, pp. 12–20, Jan. 2012. |
4 | J.N. Shive, “Semiconductor Devices”, Van Nostrand, 1959 |
5 | A. L. Fahrenbruch and R. H. Bube. “Foundamentals of Solar Cells”. Academic Press, New York, 1983. |
6 | S. Witzack, R.D. Schrimpf, K.F. Galloway, D.M. Fleetwood, R.L. Pease, J.M. Puhl, D.M. Schmidt, W.E. Combs and J.S. Suehle, “Accelerated tests for simulating low dose rate gain degradation of lateral and substrate PNP bipolar junction transistors”, IEEE Trans. Nucl. Sci. , NS-43, 6, 3151 (1996). |
7 | V.A.J. Van Lint, T.M. Flanagan, R.E. Leadon, J.A. Naber and V.C. Rodgers, “Mechanisms of radiation effects in electronic materials”, Vol 1, John Wiley, NewYork (1980) |