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In this paper, the effect of high-temperature treatments on the development of a defect structure of silicon with transition elements is studied by using capacitive and infrared spectroscopy. It was found that the presence of bound states of technological impurities - particles of SiO2 and SiO4, in Si doped with transition elements leads to a change in the efficiency of the formation of deep levels associated with the atoms of manganese, cobalt and chromium.It was found that the presence of bound states of technological impurities in silicon, for example, SiO2 particles in the Si lattice, increases the efficiency of the deep centers formation created in the semiconductor band gap, while the presence of a SiO2 film, on the contrary, prevents the introduction of T-ion impurities into the bulk of silicon.

  • Web Address
  • DOI
  • Date of creation in the UzSCI system19-11-2020
  • Read count0
  • Date of publication27-10-2020
  • Main LanguageIngliz
  • Pages9-14
English

In this paper, the effect of high-temperature treatments on the development of a defect structure of silicon with transition elements is studied by using capacitive and infrared spectroscopy. It was found that the presence of bound states of technological impurities - particles of SiO2 and SiO4, in Si doped with transition elements leads to a change in the efficiency of the formation of deep levels associated with the atoms of manganese, cobalt and chromium.It was found that the presence of bound states of technological impurities in silicon, for example, SiO2 particles in the Si lattice, increases the efficiency of the deep centers formation created in the semiconductor band gap, while the presence of a SiO2 film, on the contrary, prevents the introduction of T-ion impurities into the bulk of silicon.

Русский

 В данной работе методами емкостной и инфракрасной спектроскопии изучено влияние высокотемпературных обработок на развитие дефектной структуры кремния с примесями переходных элементов. Установлено, что присутствие связанных состояний технологических примесей – частиц SiO2 и SiO4, в Si, легированном переходными элементами приводит к изменению эффективности образования глубоких уровней, связанных с атомами марганца, кобальта и хрома. Обнаружено, что наличие связанных состояний технологических примесей в кремнии, например, частиц SiO2 в решетке Si увеличевает эффективность образования глубоких центров, создаваемых в запрещенной зоне полупроводника, присутствие же пленки SiO2, напротив, препятствует введению в объем кремния примесей Т-ионов

№ Name of reference
1 Яримўтказгичлар физикаси ва микроэлектроника
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