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DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS
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DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS
263
Name of journal
Физика полупроводников и микроэлектроника
Number of edition
2020, том 2, выпуск 3
View count
263
Web Address
https://uzjournals.edu.uz/semiconductors/vol2/iss3/9/
DOI
Date of creation in the UzSCI system
27-03-2022
Read count
0
Date of publication
25-06-2020
Main Language
Ingliz
Pages
40-42
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№
Author name
position
Name of organisation
1
Daliev S.K.
scienstist
Semiconductor Physics and Microelectronics Research Institute
№
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