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Semiconductor Physics and Microelectronics
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Semiconductor Physics and Microelectronics
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2020, том 2, выпуск 3

Published date
25 Iyun 2020
Volume
2
Issue
№3
ISSN
2181-9947

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DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES

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THE INFLUENCE OF EXTERNAL FACTORS ON PROPERTIES OF IRRADIATED SILICON MIS STRUCTURES

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MULTICHANNEL OPTICAL SPECTRUM RECORDER FOR MICROELEMENTS DETERMINATION

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NEW SCIENTIFIC DIRECTION OF SEMICONDUCTOR PHYSICS: NATURAL SEMICONDUCTORS

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