Сарлавҳа | CoAuthors | Мақола тили | Кўришлар | Ўқишлар |
---|---|---|---|---|
DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES Физика полупроводников и микроэлектроника | Utamuradova S.B. | Ingliz | 240 | |
INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON Физика полупроводников и микроэлектроника | Utamuradova S.B. | Ingliz | 107 |