| Сарлавҳа | CoAuthors | Мақола тили | Кўришлар | Ўқишлар |
|---|---|---|---|---|
| DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES Физика полупроводников и микроэлектроника | Utamuradova S.B. | Ingliz | 457 | |
| INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON Физика полупроводников и микроэлектроника | Utamuradova S.B. | Ingliz | 243 |