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Negative differential resistance (NDR) switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis (USP). The NDR switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments

  • Название журнала
  • Номер выпуска
  • Количество просмотров 208
  • Ссылка в интернете
  • DOI
  • Дата создание в систему UzSCI 05-10-2020
  • Количество прочтений 100
  • Дата публикации
  • Язык статьиIngliz
  • Страницы315-318
Ключевые слова
English

Negative differential resistance (NDR) switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis (USP). The NDR switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments

Ключевые слова
№ Имя автора Должность Наименование организации
1 Abdullaev S..
2 Sharipova R..
3 Yuldashev S.U.
№ Название ссылки
1 Yang Y., Qi J., Guo W., Qin Z., Zhang Y., Appl. Phys. Lett. Lett. 2010, 96, 093107.
2 Zhu B., Zheng K., Wu X., Ang L. K., Scientific Reports, 2017, 7, 43664.
3 Simanjuntak F.M., Panda D., Wei K., Tseng T., Nanoscale Res. Lett. 2016, 11, 368
4 Kadhim M. S., Yang F., Sun B., Wang Y., Guo T., Jia Y., Yuan L., Yu Y., Zhao Y., Appl. Phys. Lett. 2018, 113, 053502
5 Filatov D. O., Lapshina M.A., Antonov D. A. , Gorshkov O. N., V Zenkevich A. V., Lebedinskii Yu. Yu., Journal of Physics: Conference Series, 2010, 245,012018
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