205

Negative differential resistance (NDR) switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis (USP). The NDR switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments

  • Jurnal nomi
  • Nashr soni
  • Ko'rishlar soni 205
  • Internet havola
  • DOI
  • UzSCI tizimida yaratilgan sana 05-10-2020
  • O'qishlar soni 97
  • Nashr sanasi
  • Asosiy tilIngliz
  • Sahifalar315-318
English

Negative differential resistance (NDR) switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis (USP). The NDR switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments

№ Muallifning F.I.Sh. Lavozimi Tashkilot nomi
1 Abdullaev S..
2 Sharipova R..
3 Yuldashev S.U.
№ Havola nomi
1 Yang Y., Qi J., Guo W., Qin Z., Zhang Y., Appl. Phys. Lett. Lett. 2010, 96, 093107.
2 Zhu B., Zheng K., Wu X., Ang L. K., Scientific Reports, 2017, 7, 43664.
3 Simanjuntak F.M., Panda D., Wei K., Tseng T., Nanoscale Res. Lett. 2016, 11, 368
4 Kadhim M. S., Yang F., Sun B., Wang Y., Guo T., Jia Y., Yuan L., Yu Y., Zhao Y., Appl. Phys. Lett. 2018, 113, 053502
5 Filatov D. O., Lapshina M.A., Antonov D. A. , Gorshkov O. N., V Zenkevich A. V., Lebedinskii Yu. Yu., Journal of Physics: Conference Series, 2010, 245,012018
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