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O'zbek
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INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY
Bosh sahifa
Maqolalar
INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY
326
Jurnal nomi
Физика полупроводников и микроэлектроника
Nashr soni
2020, том 2, выпуск 4
Ko'rishlar soni
326
Internet havola
https://uzjournals.edu.uz/semiconductors/vol2/iss4/2/
DOI
UzSCI tizimida yaratilgan sana
28-03-2022
O'qishlar soni
0
Nashr sanasi
25-08-2020
Asosiy til
Ingliz
Sahifalar
14-17
Kalit so'z
Annotatsiyalar
Mualliflar
Foydalanilgan adabiyotlar
Hujjatni onlayn ko'rish
№
Muallifning F.I.Sh.
Lavozimi
Tashkilot nomi
1
Daliev S.K.
scienstist
Semiconductor Physics and Microelectronics Research Institute
№
Havola nomi
Kutilmoqda