Bosh sahifa
Jurnallar
Mualliflar
Maqolalar
Yangiliklar
O'zbek
Русский
Ingliz tili
Kirish
INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON
Bosh sahifa
Maqolalar
INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON
110
Jurnal nomi
Физика полупроводников и микроэлектроника
Nashr soni
2020, том 2, выпуск 4
Ko'rishlar soni
110
Internet havola
https://uzjournals.edu.uz/semiconductors/vol2/iss4/13/
DOI
UzSCI tizimida yaratilgan sana
28-03-2022
O'qishlar soni
0
Nashr sanasi
25-08-2020
Asosiy til
Ingliz
Sahifalar
55-58
Kalit so'z
Annotatsiyalar
Mualliflar
Foydalanilgan adabiyotlar
Hujjatni onlayn ko'rish
№
Muallifning F.I.Sh.
Lavozimi
Tashkilot nomi
1
Utamuradova S.B.
Director
Semiconductor Physics and Microelectronics Research Institute
№
Havola nomi
Kutilmoqda