This work provides information on the formation of the main part of thermal
radiation receivers. In addition, the article defines and creates optimal modes for creating
targets for magnetron sputtering from higher manganese silicide (Mn4Si7) and cobalt
monosilicide (CoSi). As is known, the device is formed from a two - type film, where the Mn4Si7
film gives the p - type, and the CoSi film gives the n - type. Films were formed using these
targets by magnetron sputtering and their electrophysical properties were studied. The results
obtained showed that the resulting films have a structure suitable for instrumentation. The
paper also presents theoretical studies on the creation of photomasks to create a device
design. Using the method of magnetron sputtering, a structure was created that can be used
in thermal radiation receivers. The mechanism of structure formation has been developed.
This work provides information on the formation of the main part of thermal
radiation receivers. In addition, the article defines and creates optimal modes for creating
targets for magnetron sputtering from higher manganese silicide (Mn4Si7) and cobalt
monosilicide (CoSi). As is known, the device is formed from a two - type film, where the Mn4Si7
film gives the p - type, and the CoSi film gives the n - type. Films were formed using these
targets by magnetron sputtering and their electrophysical properties were studied. The results
obtained showed that the resulting films have a structure suitable for instrumentation. The
paper also presents theoretical studies on the creation of photomasks to create a device
design. Using the method of magnetron sputtering, a structure was created that can be used
in thermal radiation receivers. The mechanism of structure formation has been developed.
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