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Publisher info
Name:OʻzMU huzuridagi Yarimoʻtkazgichlar fizikasi va mikroelektronika ITI
Address:100057, Toshkent sh., Olmazor tum., Yangi Olmazor koʻchasi, 20 uy.
Phone: +998 71 248 79 94
Email: ispm_uz@mail.ru
| Name | 2020, том 2, выпуск 4 | ||
| Journal | Физика полупроводников и микроэлектроника | ||
| Volume Number | 2 | ||
| Published At | 25/08/2020 | ||
| Pages | 69 | ||
| Issue Number | 4 | ||
| Total number | 6 | ||
| File | |||
| The full name of the article | Language | Pages | View count | Read count |
|---|---|---|---|---|
|
Физика полупроводников и микроэлектроника |
Ingliz | 9-13 | 260 | 0 |
|
INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY Физика полупроводников и микроэлектроника |
Ingliz | 14-17 | 354 | 0 |
|
Физика полупроводников и микроэлектроника |
Ingliz | 18-21 | 233 | 0 |
|
PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON Физика полупроводников и микроэлектроника |
Ingliz | 22-24 | 281 | 0 |
|
STRUCTURAL FEATURES OF THE THIN-FILM N-ZnO/P-Si HETEROJUNCTION Физика полупроводников и микроэлектроника |
Ingliz | 25-28 | 275 | 0 |