В работе рассмотрено влияние скоплений примесных атомов никеля на структуру монокристаллического кремния. С помощью метода электронно-зондового микроанализа изучены типичные свойства дислокационных линий, образующихся вокруг скоплений примесных атомов никеля в кремнии.
The effect of clusters of nickel impurity atoms on the structure of single-crystal silicon is considered. Using the electron probe microanalysis method, the typical properties of dislocation lines formed around clusters of nickel impurity atoms in silicon are studied.
| № | Muallifning F.I.Sh. | Lavozimi | Tashkilot nomi |
|---|---|---|---|
| 1 | Turgunov N.. | ||
| 2 | Zainabidinov S.Z. | ||
| 3 | Akbarov S.. | ||
| 4 | Berkinov E.. |
| № | Havola nomi |
|---|---|
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