158

  • Jurnal nomi
  • Nashr soni
  • Ko'rishlar soni 158
  • Internet havola
  • DOIdoi.org/10.47100/conference_physics/S2_24
  • UzSCI tizimida yaratilgan sana 20-08-2020
  • O'qishlar soni 56
  • Nashr sanasi
  • Asosiy tilO'zbek
  • Sahifalar152-156
Kalit so'z
Русский

Измерены значения коэффициентов линейного поглощения гамма – излучения 60Со и 137Сs для тройных полупроводниковых аналогов (TlGaS2, TlInS2, TlGaSe2, TlInSe2) в зависимости от угла φ между плоскостями скола и направлением излучения. При углах φ = 90о значения μ превышающих их для углов φ = 0о приблизительно на 20 – 40%..

English

γ – absorption anisotropy is proved experimentally in А IIIВ IIIC VI 2 type layered semiconductors and their complex analogues, which appears to be due to reticular (nuclear) density differences in different crystallographic directions. Linear 60Со and 137Сs gamma – absorption coefficients are measured for their triple ternary (TlGaS2, TlInS2, TlGaSe2, TlInSe2) analogues in relation to φ angle between planes and radiation direction μ values at φ = 90o prevail over those at φ = 0 o by about 20 – 40%.

№ Muallifning F.I.Sh. Lavozimi Tashkilot nomi
1 Umarov S..
2 Kerimova E..
3 Ashurov J..
4 Khodjayev U..
№ Havola nomi
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