КРЕМНИЙ АСОСЛИ ҚУЁШ ЭЛЕМЕНТЛАРИГА ГАММА РАДИАЦИЯНИНГ ТАЪСИРИ

Nosirov  Murodjon; Gulomov Jasurbek; Madaminova Iroda; Aliev Raimjon

231

Ушбу мақолада кремний асосли қуёш элементларида заряд ташувчиларининг кинетик характеристикалари ва волт-ампер характеристикасига гамма радиациянинг таъсирини назарий таҳлили ҳамда янги миллий рақамли технологик платформада олинган натижалар келтирилган

Jurnal nomi
Nashr soni
Ko'rishlar soni 231

Internet havola

DOI

UzSCI tizimida yaratilgan sana 12-10-2020

O'qishlar soni 143

Nashr sanasi

Asosiy tilO'zbek

Sahifalar179-184

Kalit so'z

моделлаштириш

қуёш элементи

кремний

диффузион узунлик

гамма радиация

Ўзбек

Ушбу мақолада кремний асосли қуёш элементларида заряд ташувчиларининг кинетик характеристикалари ва волт-ампер характеристикасига гамма радиациянинг таъсирини назарий таҳлили ҳамда янги миллий рақамли технологик платформада олинган натижалар келтирилган

Kalit so'z

моделлаштириш

қуёш элементи

кремний

диффузион узунлик

гамма радиация

English

In this article, describes theoretical analyzing of gamma radiation influence kinetic characteristics of carriers in silicon bases solar cell and its I-V charactersitics also give results that is taken by new digital technological platform.

Kalit so'z

modeling

solar cell

silicon

diffusion length

gamma radiation

№ Muallifning F.I.Sh. Lavozimi Tashkilot nomi

1 Nosirov M..

2 Gulomov J..

3 Madaminova I..

4 Aliev R..

№ Havola nomi

1 F.H.ATTIX,Dosimetry by Solid State Devices, NRL Report 5777, June 15, 1962.

2 J. Barth, “Modeling Space Radiation Environment”, 1997 IEEE NSREC Short Course.

3 M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, “Solar cell efficiency tables (version 39),” Progress in Photovoltaics: Research and Applications, vol. 20, no. 1, pp. 12–20, Jan. 2012.

4 J.N. Shive, “Semiconductor Devices”, Van Nostrand, 1959

5 A. L. Fahrenbruch and R. H. Bube. “Foundamentals of Solar Cells”. Academic Press, New York, 1983.

6 S. Witzack, R.D. Schrimpf, K.F. Galloway, D.M. Fleetwood, R.L. Pease, J.M. Puhl, D.M. Schmidt, W.E. Combs and J.S. Suehle, “Accelerated tests for simulating low dose rate gain degradation of lateral and substrate PNP bipolar junction transistors”, IEEE Trans. Nucl. Sci. , NS-43, 6, 3151 (1996).

7 V.A.J. Van Lint, T.M. Flanagan, R.E. Leadon, J.A. Naber and V.C. Rodgers, “Mechanisms of radiation effects in electronic materials”, Vol 1, John Wiley, NewYork (1980)

Kutilmoqda

№	Havola nomi
1	F.H.ATTIX,Dosimetry by Solid State Devices, NRL Report 5777, June 15, 1962.
2	J. Barth, “Modeling Space Radiation Environment”, 1997 IEEE NSREC Short Course.
3	M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, “Solar cell efficiency tables (version 39),” Progress in Photovoltaics: Research and Applications, vol. 20, no. 1, pp. 12–20, Jan. 2012.
4	J.N. Shive, “Semiconductor Devices”, Van Nostrand, 1959
5	A. L. Fahrenbruch and R. H. Bube. “Foundamentals of Solar Cells”. Academic Press, New York, 1983.
6	S. Witzack, R.D. Schrimpf, K.F. Galloway, D.M. Fleetwood, R.L. Pease, J.M. Puhl, D.M. Schmidt, W.E. Combs and J.S. Suehle, “Accelerated tests for simulating low dose rate gain degradation of lateral and substrate PNP bipolar junction transistors”, IEEE Trans. Nucl. Sci. , NS-43, 6, 3151 (1996).
7	V.A.J. Van Lint, T.M. Flanagan, R.E. Leadon, J.A. Naber and V.C. Rodgers, “Mechanisms of radiation effects in electronic materials”, Vol 1, John Wiley, NewYork (1980)