Maqolaning nomi | Hammualliflar | Asosiy til | Ko'rishlar | O'qishlar |
---|---|---|---|---|
DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES Физика полупроводников и микроэлектроника | Utamuradova S.B. | Ingliz | 315 | |
INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON Физика полупроводников и микроэлектроника | Utamuradova S.B. | Ingliz | 150 |