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MODELING OF A CIGS SOLAR CELL IN SENTAURUS TCAD

Field of Science:Energy (miscellaneous)Energy Engineering and Power TechnologyRenewable Energy, Sustainability and the Environment
National field of science (HAC):02.00.08 — Chemistry and technology of oil and gas04.00.12 — Construction and operation of oil and gas pipelines, bases and storage facilities04.00.13 — Development and operation of oil and gas fields05.05.04 — Industrial heat power engineering05.05.01 — Power systems and complexes05.05.02 — Electrical engineering. Electric power stations and systems. Electrotechnical complexes and devices05.05.03 — Lighting engineering. Special lighting technologies05.05.09 — Nuclear power installations and technologies05.05.10 — Nuclear reactor engineering, machines, units and materials technology of the nuclear industry05.05.05 — Theoretical foundations of thermal engineering05.05.06 — Power installations based on renewable energy sources05.05.07 — Electrical technologies and electrical equipment in agriculture
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Abstract. In this work, a numerical model of a thin-film CIGS solar cell was developed and calibrated using Synopsys Sentaurus TCAD. The methodology is based on the self-consistent solution of drift–diffusion equations, with optical generation calculated using the transfer matrix method. The performed correlation analysis revealed a strong dependence of the bandgap energy (E₉) on the open-circuit voltage (r ≈ 0.99), as well as the influence of the CdS layer thickness and fill factor (FF) on the device efficiency. The obtained results can be used to optimize flexible photovoltaic devices. Materials and Methods. Numerical modeling of CIGS solar cells was performed in TCAD using the drift–diffusion approximation, with a self-consistent solution of charge transport equations, optical generation calculated via the transfer matrix method, and inclusion of the main recombination mechanisms in the multilayer Mo/CIGS/CdS/OVC structure. Results. Numerical modeling of the CIGS solar cell was performed for 36 configurations under standard AM 1.5 G illumination, with the efficiency ranging from 16.19% to 19.99% depending on the structural parameters. Correlation analysis revealed a strong dependence of the bandgap energy (E₉) on the open-circuit voltage (Vₒc) (r ≈ 0.99) and the photocurrent (Jₚₕ), as well as a decrease in efficiency with increasing thickness of the CdS and CIGS layers. The fill factor (FF) was found to have the greatest impact on improving the device efficiency.

AUTHORS

Science ID: DQD-0525-0034

Science ID: MBX-0525-0009

Tags

# моделирование# анализ# элементы# гетероструктура# тонкоплёночные# солнечные# cigs# диселенид# меди-индия-галлия# sentaurus# tcad# численное# корреляционный

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